Citation: |
Niu Xinhuan, Tan Baimei, Zhao Xiaohong, Liu Yuling. High Precision Finishing Process for Sapphire Substrate Surface[J]. Journal of Semiconductors, 2007, 28(S1): 48-51.
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Niu X H, Tan B M, Zhao X H, Liu Y L. High Precision Finishing Process for Sapphire Substrate Surface[J]. Chin. J. Semicond., 2007, 28(S1): 48.
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High Precision Finishing Process for Sapphire Substrate Surface
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Abstract
We studied the design of experiments in order to obtain optimized chemical mechanical polishing (CMP) equipment variables and treated sapphire substrate surfaces using theCMP method on a C6382IW/YJ single side polisher. According to sapphire substrate and its product properties,we chose alkali slurry and took SiO2 sol as abrasive.Various process parameters,such as table speed,slurry flow rate,temperature and down force,were investigated from th.e viewpoint of high removal rate.Through the experiment results,we determined the optimal CMP process parameters -
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