Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 226-228
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用GaAs张应变层控制InP衬底上InAs三维岛的有序排列

王本忠 , 赵方海 , 彭宇恒 and 刘式墉

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 226-228
      王本忠, 赵方海, 彭宇恒, 刘式墉. 用GaAs张应变层控制InP衬底上InAs三维岛的有序排列[J]. 半导体学报(英文版), 1998, 19(3): 226-228.
      Citation:
      王本忠, 赵方海, 彭宇恒, 刘式墉. 用GaAs张应变层控制InP衬底上InAs三维岛的有序排列[J]. 半导体学报(英文版), 1998, 19(3): 226-228.
      shu

      • Received Date: 2015-08-20

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