| Citation: |
Wei Qiyuan, Li Ti, Wang Yanjie, Chen Weihua, Li Rui, Pan Yaobo, Xu Ke, Zhang Bei, Yang Zhijian, Hu Xiaodon. Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode[J]. Journal of Semiconductors, 2007, 28(S1): 471-474.
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Wei Q Y, Li T, Wang Y J, Chen W H, Li R, Pan Y B, Xu K, Zhang B, Yang Z J, Hu X. Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode[J]. Chin. J. Semicond., 2007, 28(S1): 471.
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Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode
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Abstract
For the quaternary and ternary alloy as active region of LDs，the key parameters including threshold current and external differential quantum efficiency of LD samples were compared and investigated，while the gain distribution was simulated. The better performance is attributed to the optimum quaternary MQW structure design. For the optimum MQWs，the further study on the leakage current and gain in LDs is performed.-
Keywords:
- GaN,
- laser diode,
- quantum well,
- quaternary alloy,
- gain
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References
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Proportional views
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