Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 467-470
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Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。

Cao Meng, Wu Huizhen, Lao Yanfeng, Liu Cheng, Xie Zhengsheng and Cao Chunfang

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Abstract: To investigate the influence of dry etching on the luminescence characteristic of strained multiple quantum wells， InAsP/InGaAsP multiple quantum wells are grown using gas source molecular epitaxy (GSMBE). It was found that after dry etching a certain depth of the cap layer of the multiple quantum well structure，the PL intensity of the quantum well is enhanced greatly. It was caused by rough surface and microstructure change after dry etching.

Key words: etching, strained multiple quantum wells, PL spectra, damage

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 467-470
      Cao Meng, Wu Huizhen, Lao Yanfeng, Liu Cheng, Xie Zhengsheng, Cao Chunfang. Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。[J]. Journal of Semiconductors, 2007, 28(S1): 467-470. ****Cao M, Wu H Z, Lao Y F, Liu C, Xie Z S, Cao C F. Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。[J]. Chin. J. Semicond., 2007, 28(S1): 467.
      Citation:
      Cao Meng, Wu Huizhen, Lao Yanfeng, Liu Cheng, Xie Zhengsheng, Cao Chunfang. Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。[J]. Journal of Semiconductors, 2007, 28(S1): 467-470. ****
      Cao M, Wu H Z, Lao Y F, Liu C, Xie Z S, Cao C F. Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。[J]. Chin. J. Semicond., 2007, 28(S1): 467.
      shu

      Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。

      • State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China,State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China,State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China,State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China and State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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