Chin. J. Semicond. > 1982, Volume 3 > Issue 3 > 245-247
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不同金属栅极的M-SiO_2-Si系统可动离子界面陷阱能量分布的研究

王阳元 , 张利春 , 吉力久 and 倪学文

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(3): 245-247
      王阳元, 张利春, 吉力久, 倪学文. 不同金属栅极的M-SiO_2-Si系统可动离子界面陷阱能量分布的研究[J]. 半导体学报(英文版), 1982, 3(3): 245-247.
      Citation:
      王阳元, 张利春, 吉力久, 倪学文. 不同金属栅极的M-SiO_2-Si系统可动离子界面陷阱能量分布的研究[J]. 半导体学报(英文版), 1982, 3(3): 245-247.
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      • Received Date: 2015-08-20

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