Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 292-296
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多晶硅薄膜压阻系数的理论研究

刘晓为 , 霍明学 , 陈伟平 , 王东红 and 张颖

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Key words: 应力退耦模型, 压阻系数, 多晶硅

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 292-296
      刘晓为, 霍明学, 陈伟平, 王东红, 张颖. 多晶硅薄膜压阻系数的理论研究[J]. 半导体学报(英文版), 2004, 25(3): 292-296.
      Citation:
      刘晓为, 霍明学, 陈伟平, 王东红, 张颖. 多晶硅薄膜压阻系数的理论研究[J]. 半导体学报(英文版), 2004, 25(3): 292-296.
      shu

      • Received Date: 2015-08-19

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