Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 977-982
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径向三重流MOCVD反应器输运过程的数值模拟

左然 , 张红 and 刘祥林

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Key words: MOCVD, 输运过程, 热对流, 数值模拟

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 977-982
      左然, 张红, 刘祥林. 径向三重流MOCVD反应器输运过程的数值模拟[J]. 半导体学报(英文版), 2005, 26(5): 977-982.
      Citation:
      左然, 张红, 刘祥林. 径向三重流MOCVD反应器输运过程的数值模拟[J]. 半导体学报(英文版), 2005, 26(5): 977-982.
      shu

      • Received Date: 2015-08-19

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