Issue Browser
Volume 26, Issue 5,
May 2005
Chin. J. Semicond.
2005, 26(5): 853-857
Chin. J. Semicond.
2005, 26(5): 857-861
Chin. J. Semicond.
2005, 26(5): 862-866
In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separation by implanted oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2e15 and 3e15cm－2,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2e15cm－2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a totaldose irradiation of 5e4rad(Si),whereas the nitrogen-implanted 3e15cm－2 BOX has a lower hardness than the control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing totaldose of irradiation (from 5e4 to 5e5rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metalsiliconBOXsilicon(MSOS) structure is observed and explained.
Chin. J. Semicond.
2005, 26(5): 867-872
Chin. J. Semicond.
2005, 26(5): 873-876
Chin. J. Semicond.
2005, 26(5): 877-880
Chin. J. Semicond.
2005, 26(5): 881-885
Chin. J. Semicond.
2005, 26(5): 886-892
Chin. J. Semicond.
2005, 26(5): 893-898
Chin. J. Semicond.
2005, 26(5): 899-903
