Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 958-964
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渐变带隙结构在Ⅲ-Ⅴ族太阳电池中的应用

彭华 , 周之斌 , 崔容强 , 叶庆好 , 庞乾骏 , 陈鸣波 and 赵亮

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Key words: 太阳电池, 渐变带隙, 载流子产生, 载流子收集

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 958-964
      彭华, 周之斌, 崔容强, 叶庆好, 庞乾骏, 陈鸣波, 赵亮. 渐变带隙结构在Ⅲ-Ⅴ族太阳电池中的应用[J]. 半导体学报(英文版), 2005, 26(5): 958-964.
      Citation:
      彭华, 周之斌, 崔容强, 叶庆好, 庞乾骏, 陈鸣波, 赵亮. 渐变带隙结构在Ⅲ-Ⅴ族太阳电池中的应用[J]. 半导体学报(英文版), 2005, 26(5): 958-964.
      shu

      • Received Date: 2015-08-19

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