Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 931-935
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Si基氨化ZnO／Ga2O3薄膜制备GaN纳米线

高海永 , 庄惠照 , 薛成山 , 王书运 , 何建廷 , 董志华 , 吴玉新 and 田德恒

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Key words: GaN纳米线, ZnO/Ga2O3薄膜, 射频磁控溅射, 氨化

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 931-935
      高海永, 庄惠照, 薛成山, 王书运, 何建廷, 董志华, 吴玉新, 田德恒. Si基氨化ZnO／Ga2O3薄膜制备GaN纳米线[J]. 半导体学报(英文版), 2005, 26(5): 931-935.
      Citation:
      高海永, 庄惠照, 薛成山, 王书运, 何建廷, 董志华, 吴玉新, 田德恒. Si基氨化ZnO／Ga2O3薄膜制备GaN纳米线[J]. 半导体学报(英文版), 2005, 26(5): 931-935.
      shu

      • Received Date: 2015-08-19

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