Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 936-940
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水平冷壁CVD生长4H-SiC同质外延膜

高欣 , 孙国胜 , 李晋闽 , 赵万顺 , 王雷 , 张永兴 and 曾一平

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Key words: 碳化硅, 化学气相沉积, 原子力显微镜, Raman, 光致发光

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 936-940
      高欣, 孙国胜, 李晋闽, 赵万顺, 王雷, 张永兴, 曾一平. 水平冷壁CVD生长4H-SiC同质外延膜[J]. 半导体学报(英文版), 2005, 26(5): 936-940.
      Citation:
      高欣, 孙国胜, 李晋闽, 赵万顺, 王雷, 张永兴, 曾一平. 水平冷壁CVD生长4H-SiC同质外延膜[J]. 半导体学报(英文版), 2005, 26(5): 936-940.
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      • Received Date: 2015-08-19

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