Strained-Si pMOSFETs on Very Thin Virtual SiGe Substrates

Li Jingchun , Tan Jing , Yang Mohua and Zhang Jing，and Xu Wanjing

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Key words: strained-Si, virtual SiGe substrates, pMOSFET

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Received: 19 August 2015 Revised: Online: Published: 01 May 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(5): 881-885

Li Jingchun, Tan Jing, Yang Mohua, Zhang Jing，and Xu Wanjing. Strained-Si pMOSFETs on Very Thin Virtual SiGe Substrates[J]. 半导体学报(英文版), 2005, 26(5): 881-885.

Citation:

Li Jingchun, Tan Jing, Yang Mohua, Zhang Jing，and Xu Wanjing. Strained-Si pMOSFETs on Very Thin Virtual SiGe Substrates[J]. 半导体学报(英文版), 2005, 26(5): 881-885.

Li Jingchun, Tan Jing, Yang Mohua, Zhang Jing，and Xu Wanjing. Strained-Si pMOSFETs on Very Thin Virtual SiGe Substrates[J]. 半导体学报(英文版), 2005, 26(5): 881-885.

Citation:

Li Jingchun, Tan Jing, Yang Mohua, Zhang Jing，and Xu Wanjing. Strained-Si pMOSFETs on Very Thin Virtual SiGe Substrates[J]. 半导体学报(英文版), 2005, 26(5): 881-885.

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