Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 983-989
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基于C-V, I-V, Q-V特性的铁电电容新模型

陈小明 and 汤庭鳌

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Key words: 铁电电容, 模型, C-V特性, 电偶极子, 概率密度函数

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 983-989
      陈小明, 汤庭鳌. 基于C-V, I-V, Q-V特性的铁电电容新模型[J]. 半导体学报(英文版), 2005, 26(5): 983-989.
      Citation:
      陈小明, 汤庭鳌. 基于C-V, I-V, Q-V特性的铁电电容新模型[J]. 半导体学报(英文版), 2005, 26(5): 983-989.
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      • Received Date: 2015-08-19

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