Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 1015-1019
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三沟道体电荷耦合器件在近红外光区光电特性的数值模拟

宋敏 , 张颖 , 王玉新 and 郑亚茹

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Key words: 体电荷耦合器件, 光敏特性, 多光谱成像

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 1015-1019
      宋敏, 张颖, 王玉新, 郑亚茹. 三沟道体电荷耦合器件在近红外光区光电特性的数值模拟[J]. 半导体学报(英文版), 2005, 26(5): 1015-1019.
      Citation:
      宋敏, 张颖, 王玉新, 郑亚茹. 三沟道体电荷耦合器件在近红外光区光电特性的数值模拟[J]. 半导体学报(英文版), 2005, 26(5): 1015-1019.
      shu

      • Received Date: 2015-08-19

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