Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 910-916
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高碳CZ硅中氧沉淀的两种成核长大机制

刘培东 , 姜益群 , 黄笑容 , 沈益军 , 李立本 and 阙端麟

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Key words: 氧沉淀, 碳氧复合物, 直拉硅, 硅中氧, 硅中碳

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 910-916
      刘培东, 姜益群, 黄笑容, 沈益军, 李立本, 阙端麟. 高碳CZ硅中氧沉淀的两种成核长大机制[J]. 半导体学报(英文版), 2005, 26(5): 910-916.
      Citation:
      刘培东, 姜益群, 黄笑容, 沈益军, 李立本, 阙端麟. 高碳CZ硅中氧沉淀的两种成核长大机制[J]. 半导体学报(英文版), 2005, 26(5): 910-916.
      shu

      • Received Date: 2015-08-19

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