Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 917-921
|

CONTENTS

色散对GaN和ZnO的XRD摇摆曲线的影响

王立 , 方文卿 , 蒲勇 , 郑畅达 , 戴江南 , 莫春兰 and 江风益

+ Author Affiliations

PDF

Key words: GaN, ZnO, 金属有机物化学气相沉积, X射线双晶衍射, 色散效应

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3257 Times PDF downloads: 2340 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 917-921
      王立, 方文卿, 蒲勇, 郑畅达, 戴江南, 莫春兰, 江风益. 色散对GaN和ZnO的XRD摇摆曲线的影响[J]. 半导体学报(英文版), 2005, 26(5): 917-921.
      Citation:
      王立, 方文卿, 蒲勇, 郑畅达, 戴江南, 莫春兰, 江风益. 色散对GaN和ZnO的XRD摇摆曲线的影响[J]. 半导体学报(英文版), 2005, 26(5): 917-921.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return