Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1549-1554

CONTENTS

4H-SiC低压热壁CVD同质外延生长及特性(英文)

孙国胜 , 高欣 , 张永兴 , 王雷 , 赵万顺 , 曾一平 and 李晋闽

+ Author Affiliations

PDF

Key words: 4H-SiC, 低压热壁CVD, 同质外延生长, 偏晶向衬底

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2771 Times PDF downloads: 1155 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1549-1554
      孙国胜, 高欣, 张永兴, 王雷, 赵万顺, 曾一平, 李晋闽. 4H-SiC低压热壁CVD同质外延生长及特性(英文)[J]. 半导体学报(英文版), 2004, 25(12): 1549-1554.
      Citation:
      孙国胜, 高欣, 张永兴, 王雷, 赵万顺, 曾一平, 李晋闽. 4H-SiC低压热壁CVD同质外延生长及特性(英文)[J]. 半导体学报(英文版), 2004, 25(12): 1549-1554.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return