Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1102-1106
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RESURF LDMOS功率器件表面场分布和击穿电压的解析模型(英文)

何进 and 张兴

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Key words: RESURF原理, LDMOS功率器件, 表面场分布, 击穿电压, 比导通电阻, 优化设计

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1102-1106
      何进, 张兴. RESURF LDMOS功率器件表面场分布和击穿电压的解析模型(英文)[J]. 半导体学报(英文版), 2001, 22(9): 1102-1106.
      Citation:
      何进, 张兴. RESURF LDMOS功率器件表面场分布和击穿电压的解析模型(英文)[J]. 半导体学报(英文版), 2001, 22(9): 1102-1106.
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      • Received Date: 2015-08-20

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