Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1107-1111
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亚0.1μm高K栅介质MOSFETs的特性(英文)

朱晖文 , 刘晓彦 , 沈超 , 康晋锋 and 韩汝琦

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Key words: 高K材料, 栅介质, 金属-氧化物-半导体场效应晶体管

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1107-1111
      朱晖文, 刘晓彦, 沈超, 康晋锋, 韩汝琦. 亚0.1μm高K栅介质MOSFETs的特性(英文)[J]. 半导体学报(英文版), 2001, 22(9): 1107-1111.
      Citation:
      朱晖文, 刘晓彦, 沈超, 康晋锋, 韩汝琦. 亚0.1μm高K栅介质MOSFETs的特性(英文)[J]. 半导体学报(英文版), 2001, 22(9): 1107-1111.
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      • Received Date: 2015-08-20

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