Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1285-1290
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AlGaN/GaN材料HEMT器件优化分析与I-V特性

祃龙 , 王燕 , 余志平 and 田立林

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Key words: AlGaN/GaN, HEMT, 二维电子气, 输出特性

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1285-1290
      祃龙, 王燕, 余志平, 田立林. AlGaN/GaN材料HEMT器件优化分析与I-V特性[J]. 半导体学报(英文版), 2004, 25(10): 1285-1290.
      Citation:
      祃龙, 王燕, 余志平, 田立林. AlGaN/GaN材料HEMT器件优化分析与I-V特性[J]. 半导体学报(英文版), 2004, 25(10): 1285-1290.
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      • Received Date: 2015-08-19

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