Chin. J. Semicond. > 1999, Volume 20 > Issue 9 > 759-762
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用改进的气相物理输运法制备高品位CdTe单晶

杨柏梁 , 石川幸雄 and 一色实

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    Received: 20 August 2015 Revised: Online: Published: 01 September 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(9): 759-762
      杨柏梁, 石川幸雄, 一色实. 用改进的气相物理输运法制备高品位CdTe单晶[J]. 半导体学报(英文版), 1999, 20(9): 759-762.
      Citation:
      杨柏梁, 石川幸雄, 一色实. 用改进的气相物理输运法制备高品位CdTe单晶[J]. 半导体学报(英文版), 1999, 20(9): 759-762.
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      • Received Date: 2015-08-20

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