Chin. J. Semicond. > 1997, Volume 18 > Issue 3 > 232-236
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LP-MOVPE生长的1.3μm InGaAsP/InP张压应变交替MQW特性

王志杰 , 陈博 , 王圩 , 张济志 , 朱洪亮 , 周帆 , 金才政 , 马朝华 and 王启明

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(3): 232-236
      王志杰, 陈博, 王圩, 张济志, 朱洪亮, 周帆, 金才政, 马朝华, 王启明. LP-MOVPE生长的1.3μm InGaAsP/InP张压应变交替MQW特性[J]. 半导体学报(英文版), 1997, 18(3): 232-236.
      Citation:
      王志杰, 陈博, 王圩, 张济志, 朱洪亮, 周帆, 金才政, 马朝华, 王启明. LP-MOVPE生长的1.3μm InGaAsP/InP张压应变交替MQW特性[J]. 半导体学报(英文版), 1997, 18(3): 232-236.
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      • Received Date: 2015-08-19

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