Chin. J. Semicond. > 1997, Volume 18 > Issue 3 > 237-240

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Effects of Non-abrupt Interface on Waveguide Properties of SiGe/Si MQW Photodetector

朱育清 , 杨沁清 and 王启明

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(3): 237-240
      朱育清, 杨沁清, 王启明. Effects of Non-abrupt Interface on Waveguide Properties of SiGe/Si MQW Photodetector[J]. 半导体学报(英文版), 1997, 18(3): 237-240.
      Citation:
      朱育清, 杨沁清, 王启明. Effects of Non-abrupt Interface on Waveguide Properties of SiGe/Si MQW Photodetector[J]. 半导体学报(英文版), 1997, 18(3): 237-240.
      shu

      • Received Date: 2015-08-19

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