Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 660-663
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0.5μm SOI CMOS器件和电路

刘新宇 , 孙海峰 , 海朝和 and 吴德馨

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Key words: 部分耗尽, “浮体”效应, 反常亚阈值特性

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 660-663
      刘新宇, 孙海峰, 海朝和, 吴德馨. 0.5μm SOI CMOS器件和电路[J]. 半导体学报(英文版), 2001, 22(5): 660-663.
      Citation:
      刘新宇, 孙海峰, 海朝和, 吴德馨. 0.5μm SOI CMOS器件和电路[J]. 半导体学报(英文版), 2001, 22(5): 660-663.
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      • Received Date: 2015-08-20

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