Chin. J. Semicond. > 1982, Volume 3 > Issue 4 > 329-336
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GaAs化学汽相淀积的热力学分析——Ga/AsCl_3/H_2/IG系统

陆大成

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(4): 329-336
      陆大成. GaAs化学汽相淀积的热力学分析——Ga/AsCl_3/H_2/IG系统[J]. 半导体学报(英文版), 1982, 3(4): 329-336.
      Citation:
      陆大成. GaAs化学汽相淀积的热力学分析——Ga/AsCl_3/H_2/IG系统[J]. 半导体学报(英文版), 1982, 3(4): 329-336.
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      • Received Date: 2015-08-20

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