Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1169-1174
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基于全定制IP设计的漏电流功耗仿真计算方法

张锋 , 周玉梅 and 黄令仪

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Key words: 漏电流功耗, 堆积因子, 有效宽度, 高阻态

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1169-1174
      张锋, 周玉梅, 黄令仪. 基于全定制IP设计的漏电流功耗仿真计算方法[J]. 半导体学报(英文版), 2004, 25(9): 1169-1174.
      Citation:
      张锋, 周玉梅, 黄令仪. 基于全定制IP设计的漏电流功耗仿真计算方法[J]. 半导体学报(英文版), 2004, 25(9): 1169-1174.
      shu

      • Received Date: 2015-08-19

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