Chin. J. Semicond. > 1995, Volume 16 > Issue 1 > 36-41
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MeV~（28）Si~＋注入GaAs的两步快退火行为

张燕文，姬成周，李国辉，王文勋

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(1): 36-41
      张燕文，姬成周，李国辉，王文勋. MeV~（28）Si~＋注入GaAs的两步快退火行为[J]. 半导体学报(英文版), 1995, 16(1): 36-41.
      Citation:
      张燕文，姬成周，李国辉，王文勋. MeV~（28）Si~＋注入GaAs的两步快退火行为[J]. 半导体学报(英文版), 1995, 16(1): 36-41.
      shu

      • Received Date: 2015-08-19

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