Chin. J. Semicond. > 1991, Volume 12 > Issue 4 > 231-237
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采用CH_4/H_2混合气对InP进行反应离子腐蚀的研究

李建中 and 陈纪瑛

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(4): 231-237
      李建中, 陈纪瑛. 采用CH_4/H_2混合气对InP进行反应离子腐蚀的研究[J]. 半导体学报(英文版), 1991, 12(4): 231-237.
      Citation:
      李建中, 陈纪瑛. 采用CH_4/H_2混合气对InP进行反应离子腐蚀的研究[J]. 半导体学报(英文版), 1991, 12(4): 231-237.
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      • Received Date: 2015-08-19

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