Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 841-846
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HfO_2高k栅介质漏电流机制和SILC效应

王成刚 , 韩德栋 , 杨红 , 刘晓彦 , 王玮 , 王漪 , 康晋锋 and 韩汝琦

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Key words: HfO2栅介质, 泄漏电流输运机制, Schottky发射, Frenkel-Poole发射, SILC

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(7): 841-846
      王成刚, 韩德栋, 杨红, 刘晓彦, 王玮, 王漪, 康晋锋, 韩汝琦. HfO_2高k栅介质漏电流机制和SILC效应[J]. 半导体学报(英文版), 2004, 25(7): 841-846.
      Citation:
      王成刚, 韩德栋, 杨红, 刘晓彦, 王玮, 王漪, 康晋锋, 韩汝琦. HfO_2高k栅介质漏电流机制和SILC效应[J]. 半导体学报(英文版), 2004, 25(7): 841-846.
      shu

      • Received Date: 2015-08-19

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