Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

Pongthavornkamol Tiwat; Lei Pang; Xinhua Wang; Sen Huang; Guoguo Liu; Tingting Yuan; Xinyu Liu

doi:10.1088/1674-4926/36/7/074006

J. Semicond. > 2015, Volume 36 > Issue 7 > 074006

SEMICONDUCTOR DEVICES

Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

Pongthavornkamol Tiwat, Lei Pang, Xinhua Wang, Sen Huang, Guoguo Liu, Tingting Yuan and Xinyu Liu

+ Author Affiliations

Corresponding author: Pongthavornkamol Tiwat, E-mail: lintiyuan@ime.ac.cn

DOI: 10.1088/1674-4926/36/7/074006

Abstract: An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at V_gs = -3.5 V, V_ds = 30 V with a frequency of 9.6 GHz are presented.

Key words: AlGaN/GaN HEMT, pulsed I-V, trapping effect, self-heating effect

References

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Fig. 1. The cross-sectional structure of AlGaN/GaN HEMT.

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Fig. 2. AlGaN/GaN HEMT device with 8 $\times$ 100 $\mu $m gate width.

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Fig. 3. Current-voltage characteristic curves of $I_{\rm ds}$ measurements from zero quiescent pulse (dash line) and class-B quiescent pulse (solid line) for a device with 8 $\times$ 100 $\mu $m gate width ($V_{\rm gs}$ $=$ -5 to 1 V with the step of 0.25 V, $V_{\rm ds}$ $=$ 0-40 V with the step of 0.5 V).

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Fig. 4. DC current-voltage characteristic curves of $I_{\rm ds}$ simulation (solid line) and measurement (circle) from "class-AB" quiescent pulse for the device with 8 $\times$ 100 $\mu $m gate width ($V_{\rm gs}$ $=$ -4.5 to 1 V with step of 0.25 V, $V_{\rm ds}$ $=$ 0-40 V with step of 0.5 V).

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Fig. 5. DC current-voltage characteristic curves of $I_{\rm gs}$ simulation (mesh) and measurement (circle) from "class-AB" quiescent pulse for the device with 8 $\times$ 100 $\mu $m gate width ($V_{\rm gs}$ $=$ -5 to 1 V with step of 0.25 V, $V_{\rm ds}$ $=$ 0-40 V with step of 0.5 V).

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Fig. 6. AlGaN/GaN HEMT large-signal model.

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Fig. 7. Simulated 4th degree polynomial function curves (mesh) and optimized values (solid circle) of voltage bias-dependent capacitance parameters in the case of zero quiescent pulsed $I$-$V$ measurement which panel (a) displays $C_{\rm gs}$ and panel (b) displays $C_{\rm gd}$.

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Fig. 8. Comparisons of $S$-parameters between measurement (square line) and simulation (solid line) of class-AB quiescent model at frequency range 500 MHz-40 GHz for a device with 8 $\times$ 100 $\mu $m gate width ($V_{\rm gs}$ $=$ $-3.5$ V, $V_{\rm ds}$ $=$ 30 V). (a) $S_{11}$ and $S_{22}$. (b) $S_{21}$ and $S_{12}$.

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Fig. 9. CW power gain measurement (crosses) and model simulations at frequency of 9.6 GHz ($V_{\rm gs}$ $=$ $-3.5$ V, $V_{\rm ds}$ $=$ 30 V) of models from zero quiescent (square line), class-AB quiescent (solid line) and class-B quiescent (triangle line) $I$-$V$ measurements.

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Fig. 10. CW output power measurement (crosses) and simulations at frequency of 9.6 GHz ($V_{\rm gs}$ $=$ $-3.5$ V, $V_{\rm ds}$ $=$ 30 V) of models extracted from zero quiescent (square line), class-AB quiescent (solid line) and class-B quiescent (triangle line) $I$-$V$ measurements.

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Fig. 11. Simulated dynamic loadlines ($f =$ 9.6 GHz, $P_{\rm in}$ $=$ 24~dBm, $V_{\rm gs}$ $=$ $-3.5$ V, $V_{\rm ds}$ $=$ 30 V) and DC $I$-$V$ curves ($V_{\rm gs}$ $=$ 1 V) at saturation level of zero quiescent (solid line and triangle line) and class-AB quiescent (dash line and square line) models.

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Fig. 12. Pulsed power gain measurement (crosses) and model simulations at frequency of 9.6 GHz ($V_{\rm gs}$ $=$ $-3.5$ V, $V_{\rm ds}$ $=$ 30 V) of models from zero quiescent (square line), class-AB quiescent (solid line) and class-B quiescent (triangle line) $I$-$V$ measurements.

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Fig. 13. Pulsed output power measurement (crosses) and simulations at frequency of 9.6 GHz ($V_{\rm gs}$ $=$ $-3.5$ V, $V_{\rm ds}$ $=$ 30 V) of models extracted from zero quiescent (square line), class-AB quiescent (solid line) and class-B quiescent (triangle line) $I$-$V$ measurements.

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Table 1. Extracted values of Angelov current-voltage model parameters for zero quiescent pulsed $I$-$V$ measurement of 8 $\times$ 100 $\mu $m gate width device.

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Table 2. Extracted values of Angelov current-voltage model parameters for class-AB quiescent pulsed $I$-$V$ measurement of 8 $\times$ 100 $\mu $m gate width device.

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Table 3. Extracted values of Angelov current-voltage model parameters for class-B quiescent pulsed $I$-$V$ measurement of 8 $\times$ 100 $\mu $m gate width device.

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Table 4. Optimized extrinsic and intrinsic parameters for large-signal model of the 8 $\times $ 100 $\mu $m gate width device with zero quiescent pulsed $I$-$V$ measurement.

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Table 5. Optimized extrinsic and intrinsic parameters for large-signal model of the 8 $\times $ 100 $\mu $m gate width device with class-AB quiescent pulsed $I$-$V$ measurement.

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Table 6. Optimized extrinsic and intrinsic parameters for large-signal model of the 8 $\times $ 100 $\mu $m gate width device with class-B quiescent pulsed $I$-$V$ measurement.

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Received: 22 December 2014 Revised: Online: Published: 01 July 2015

An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at V_gs = -3.5 V, V_ds = 30 V with a frequency of 9.6 GHz are presented.

Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

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