Chin. J. Semicond. > 1999, Volume 20 > Issue 6 > 458-462
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Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀

王启元 , 王俊 , 韩秀峰 , 邓惠芳 , 王建华 , 昝育德 , 蔡田海 , 郁元桓 and 林兰英

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(6): 458-462
      王启元, 王俊, 韩秀峰, 邓惠芳, 王建华, 昝育德, 蔡田海, 郁元桓, 林兰英. Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀[J]. 半导体学报(英文版), 1999, 20(6): 458-462.
      Citation:
      王启元, 王俊, 韩秀峰, 邓惠芳, 王建华, 昝育德, 蔡田海, 郁元桓, 林兰英. Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀[J]. 半导体学报(英文版), 1999, 20(6): 458-462.
      shu

      • Received Date: 2015-08-20

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