Chin. J. Semicond. > 1999, Volume 20 > Issue 6 > 463-467
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多晶硅薄膜应力特性研究

张国炳 , 郝一龙 , 田大宇 , 刘诗美 , 王铁松 and 武国英

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(6): 463-467
      张国炳, 郝一龙, 田大宇, 刘诗美, 王铁松, 武国英. 多晶硅薄膜应力特性研究[J]. 半导体学报(英文版), 1999, 20(6): 463-467.
      Citation:
      张国炳, 郝一龙, 田大宇, 刘诗美, 王铁松, 武国英. 多晶硅薄膜应力特性研究[J]. 半导体学报(英文版), 1999, 20(6): 463-467.
      shu

      • Received Date: 2015-08-20

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