Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 279-283
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MOCVD生长的InGaN薄膜中的相分离

陆曙 , 童玉珍 , 陈志忠 , 秦志新 , 于彤军 , 胡晓东 and 张国义

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Key words: 相分离, InGaN, InN, XRD, MOCVD

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 279-283
      陆曙, 童玉珍, 陈志忠, 秦志新, 于彤军, 胡晓东, 张国义. MOCVD生长的InGaN薄膜中的相分离[J]. 半导体学报(英文版), 2004, 25(3): 279-283.
      Citation:
      陆曙, 童玉珍, 陈志忠, 秦志新, 于彤军, 胡晓东, 张国义. MOCVD生长的InGaN薄膜中的相分离[J]. 半导体学报(英文版), 2004, 25(3): 279-283.
      shu

      • Received Date: 2015-08-19

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