Citation: |
Li Xiaoming, Zhuang Yiqi, Zhang Li, Xin Weiping. Cost-Effective VDMOS and Compatible Process for PDP Scan-Driver IC[J]. Journal of Semiconductors, 2007, 28(11): 1679-1684.
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Li X M, Zhuang Y Q, Zhang L, Xin W P. Cost-Effective VDMOS and Compatible Process for PDP Scan-Driver IC[J]. Chin. J. Semicond., 2007, 28(11): 1679.
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Cost-Effective VDMOS and Compatible Process for PDP Scan-Driver IC
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Abstract
A VDMOS integrated in a 170V scan-driver chip of a plasma display panel (PDP) is described,which is based on epitaxial bipolar-CMOS-DMOS (BCD) technology.Some key considerations and parameters of the design are discussed.The thickness of epitaxial layer is 17μm,the area of a single VDMOS structure cell is 324μm2,and only 18 photoetching steps are needed in the development process.It is also compatible with standard CMOS,bipolar,and p-LDMOS devices.The breakdown voltage of VDMOS in the process control module (PCM) is more than 200V.Five kinds of VDMOS modules are integrated in 64 channel PDP scan-driver IC,and on-line system verification is done on a LG-model-42v6 PDP.-
Keywords:
- PDP,
- VDMOS,
- BCD process,
- cost-effective,
- structure cell
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References
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Proportional views