GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz

Hao Yue; Yue Yuanzheng; Feng Qian; Zhang Jincheng; Ma Xiaohua; Ni Jinyu

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Article Navigation > Journal of Semiconductors > 2007 > 28(11): 1674-1678

Hao Yue, Yue Yuanzheng, Feng Qian, Zhang Jincheng, Ma Xiaohua, Ni Jinyu. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Journal of Semiconductors, 2007, 28(11): 1674-1678. ****Hao Y, Yue Y Z, Feng Q, Zhang J C, Ma X H, Ni J Y. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Chin. J. Semicond., 2007, 28(11): 1674.

Citation:

Hao Yue, Yue Yuanzheng, Feng Qian, Zhang Jincheng, Ma Xiaohua, Ni Jinyu. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Journal of Semiconductors, 2007, 28(11): 1674-1678. ****

Hao Y, Yue Y Z, Feng Q, Zhang J C, Ma X H, Ni J Y. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Chin. J. Semicond., 2007, 28(11): 1674.

Citation:

Hao Y, Yue Y Z, Feng Q, Zhang J C, Ma X H, Ni J Y. GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J]. Chin. J. Semicond., 2007, 28(11): 1674.

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GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071, China

Received Date: 2015-08-18
Accepted Date: 2007-05-23
Revised Date: 2007-07-02
Published Date: 2007-10-24

Abstract

Abstract

We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic-layer deposited (ALD) Al2O3 as the gate dielectric.Through decreasing the thickness of the gate oxide to 3.5nm,a device with maximum transconductance of 130mS/mm is produced.The drain current of this 1μm gate-length MOS-HEMT can reach 720mA/mm at +3.0V gate bias.The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 10.1 and 30.8GHz,respectively.
- AlGaN/GaN,
- MOS-HEMT,
- ultrathin Al2O3

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