Abstract: This paper describes the bipolar field-effect transistor (BiFET) and its theory.Analytical solution is obtained from partitioning the two-dimensional transistor into two one-dimensional transistors.The analysis employs the parametric surface-electric-potential and the electrochemical (quasi-Fermi) potential-gradient driving force to compute the current. Output and transfer D.C.current and conductance versus voltage are presented over practical ranges of terminal D.C.voltages and device parameters. Electron and hole surface channel currents are present simultaneously,a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.

Key words: bipolar field-effect transistor theory, MOS field-effect transistor, bipolar junction transistor, simultaneous hole and electron surface channel, volume, 表面势