Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure

Liang Huilai; Guo Weilian; Song Ruiliang; Qi Haitao; Zhang Shilin; Hu Liuchang; Li Jianheng; Mao Luhong; Shang Yuehui; Feng Zhen; Tian Guoping; Li Yali

Article Navigation > Journal of Semiconductors > 2007 > 28(10): 1594-1598

Liang Huilai, Guo Weilian, Song Ruiliang, Qi Haitao, Zhang Shilin, Hu Liuchang, Li Jianheng, Mao Luhong, Shang Yuehui, Feng Zhen, Tian Guoping, Li Yali. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Journal of Semiconductors, 2007, 28(10): 1594-1598. ****Liang H L, Guo W L, Song R L, Qi H T, Zhang S L, Hu L C, Li J H, Mao L H, Shang Y H, Feng Z, Tian G P, Li Y L. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Chin. J. Semicond., 2007, 28(10): 1594.

Citation:

Liang H L, Guo W L, Song R L, Qi H T, Zhang S L, Hu L C, Li J H, Mao L H, Shang Y H, Feng Z, Tian G P, Li Y L. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure[J]. Chin. J. Semicond., 2007, 28(10): 1594.

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Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure

School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China
No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China
No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China
No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China
No13 Research Institute,Chinese Electronic Technology Group Corporation, Shijiazhuang 050051,China

Received Date: 2015-08-18
Accepted Date: 2007-03-27
Revised Date: 2007-06-12
Published Date: 2007-09-26

Abstract

Abstract

The design and fabrication of a resonant tunneling transistor with an RTD/HEMT in-series structure are presented.The measurement results of the fabricated devices show that the maximum peak valley current ratio (PVCR) is 17.6∶1,the gate voltage modulating peak voltage ratio is in the range of 1.5～7.7,and the -3dB cut-off frequency is about 4GHz.This device is compatible with HEMTs in the device structure and fabrication technology,and can be used in high speed circuits with HEMTs devices.
- RTT,
- RTD,
- HEMT,
- transconductance cut off frequency,
- PVCR

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