Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors

Chen Ling; Zhu Wenqing; Bai Yu; Liu Xiang; Jiang Xueyin; Zhang Zhilin

Article Navigation > Journal of Semiconductors > 2007 > 28(10): 1589-1593

Chen Ling, Zhu Wenqing, Bai Yu, Liu Xiang, Jiang Xueyin, Zhang Zhilin. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Journal of Semiconductors, 2007, 28(10): 1589-1593. ****Chen L, Zhu W Q, Bai Y, Liu X, Jiang X Y, Zhang Z L. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Chin. J. Semicond., 2007, 28(10): 1589.

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Chen L, Zhu W Q, Bai Y, Liu X, Jiang X Y, Zhang Z L. Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors[J]. Chin. J. Semicond., 2007, 28(10): 1589.

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Effects of Surface-Modified Gate Dielectrics on Electrical Characteristics of Organic Thin-Film Transistors

Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China
School of Material Science and Engineering,Shanghai University,Shanghai 201800,China
Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China
School of Material Science and Engineering,Shanghai University,Shanghai 201800,China
Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China
Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China
Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China
Key Laboratory of Advanced Display and System Application of the Ministry of Education,Shanghai University,Shanghai 200072,China
School of Material Science and Engineering,Shanghai University,Shanghai 201800,China

Received Date: 2015-08-18
Accepted Date: 2007-03-30
Revised Date: 2007-05-31
Published Date: 2007-09-26

Abstract

Abstract

Organic thin film transistors (OTFTs) with a modified gate insulator are demonstrated.The modified gate insulator layers consist of SiO2 as the gate insulator and OTS (octadecyltrichlorosilane) or PMMA (poly methyl methacylate) as the modified layer.The devices with the modified layer have a field-effect mobility larger than 1e-3cm2/(V·s) and an on/off current ratio greater than 1e4,while their leakage current is decreased to 1e-10A.The results demonstrate that using modified gate insulators is an effective method to fabricate OTFTs with improved electric characteristics.
- organic thin-film transistors,
- gate dielectric,
- field-effect mobility,
- modified layer

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