Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 516-519
|

CONTENTS

一个超薄氧化物nMOSFET器件的直接隧穿电流经验公式(英文)

张贺秋 , 许铭真 and 谭长华

+ Author Affiliations

PDF

Key words: 直接隧穿电流, nMOSFET, 超薄

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3192 Times PDF downloads: 1826 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 516-519
      张贺秋, 许铭真, 谭长华. 一个超薄氧化物nMOSFET器件的直接隧穿电流经验公式(英文)[J]. 半导体学报(英文版), 2004, 25(5): 516-519.
      Citation:
      张贺秋, 许铭真, 谭长华. 一个超薄氧化物nMOSFET器件的直接隧穿电流经验公式(英文)[J]. 半导体学报(英文版), 2004, 25(5): 516-519.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return