Chin. J. Semicond. > 1987, Volume 8 > Issue 5 > 551-553
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1.52微米InGaAsP/InP双有源区双沟道平面掩埋异质结动态单纵模激光器

李洵 , 简水生 , 赵嵩山 and 周宁

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(5): 551-553
      李洵, 简水生, 赵嵩山, 周宁. 1.52微米InGaAsP/InP双有源区双沟道平面掩埋异质结动态单纵模激光器[J]. 半导体学报(英文版), 1987, 8(5): 551-553.
      Citation:
      李洵, 简水生, 赵嵩山, 周宁. 1.52微米InGaAsP/InP双有源区双沟道平面掩埋异质结动态单纵模激光器[J]. 半导体学报(英文版), 1987, 8(5): 551-553.
      shu

      • Received Date: 2015-08-19

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