Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 325-328
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0.25μm GaAs基MHEMT器件

石华芬 , 刘训春 , 张海英 , 石瑞英 , 王润梅 , 汪宁 and 罗明雄

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Key words: 铟铝砷/铟镓砷, 变组分高电子迁移率晶体管, 赝配高电子迁移率晶体管

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 325-328
      石华芬, 刘训春, 张海英, 石瑞英, 王润梅, 汪宁, 罗明雄. 0.25μm GaAs基MHEMT器件[J]. 半导体学报(英文版), 2004, 25(3): 325-328.
      Citation:
      石华芬, 刘训春, 张海英, 石瑞英, 王润梅, 汪宁, 罗明雄. 0.25μm GaAs基MHEMT器件[J]. 半导体学报(英文版), 2004, 25(3): 325-328.
      shu

      • Received Date: 2015-08-19

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