Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 321-324
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用GaAsMMIC实现2.1GHz的预失真线性化单片

许晓丽 , 张斌 and 邵凯

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Key words: 微波单片集成电路, 预失真, 线性化, 三阶互调功率比, 邻信道泄漏功率比

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 321-324
      许晓丽, 张斌, 邵凯. 用GaAsMMIC实现2.1GHz的预失真线性化单片[J]. 半导体学报(英文版), 2004, 25(3): 321-324.
      Citation:
      许晓丽, 张斌, 邵凯. 用GaAsMMIC实现2.1GHz的预失真线性化单片[J]. 半导体学报(英文版), 2004, 25(3): 321-324.
      shu

      • Received Date: 2015-08-19

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