Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 316-320
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新结构复合收集区InGaP/GaAs异质结双极晶体管结构设计及特性

石瑞英 , 刘训春 , 袁志鹏 , 王润梅 and 孙海锋

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Key words: 电子运动速度过冲, 复合收集区, 异质结双极晶体管, 直流和射频特性

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 316-320
      石瑞英, 刘训春, 袁志鹏, 王润梅, 孙海锋. 新结构复合收集区InGaP/GaAs异质结双极晶体管结构设计及特性[J]. 半导体学报(英文版), 2004, 25(3): 316-320.
      Citation:
      石瑞英, 刘训春, 袁志鹏, 王润梅, 孙海锋. 新结构复合收集区InGaP/GaAs异质结双极晶体管结构设计及特性[J]. 半导体学报(英文版), 2004, 25(3): 316-320.
      shu

      • Received Date: 2015-08-19

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