Chin. J. Semicond. > 1998, Volume 19 > Issue 12 > 913-918
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HgCdTe多载流子体系的定量迁移率谱分析

桂永胜 , 郑国珍 , 张新昌 and 褚君浩

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    Received: 18 August 2015 Revised: Online: Published: 01 December 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(12): 913-918
      桂永胜, 郑国珍, 张新昌, 褚君浩. HgCdTe多载流子体系的定量迁移率谱分析[J]. 半导体学报(英文版), 1998, 19(12): 913-918.
      Citation:
      桂永胜, 郑国珍, 张新昌, 褚君浩. HgCdTe多载流子体系的定量迁移率谱分析[J]. 半导体学报(英文版), 1998, 19(12): 913-918.
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      • Received Date: 2015-08-18

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