| Citation: |
Zeng Tao, Hu Yuehui, Chen Guanghua. Preparation of Microcrystalline Silicon Films by Layer-by-Layer Growth Technology and Hydrogen Plasma Treatment on the Stacking Layers in Hot-Wire-Assisted Microwave Electron-Cyclotron-Resonance Chemical Vapor Deposition System[J]. Journal of Semiconductors, 2007, 28(8): 1237-1241.
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Zeng T, Hu Y H, Chen G H. Preparation of Microcrystalline Silicon Films by Layer-by-Layer Growth Technology and Hydrogen Plasma Treatment on the Stacking Layers in Hot-Wire-Assisted Microwave Electron-Cyclotron-Resonance Chemical Vapor Deposition System[J]. Chin. J. Semicond., 2007, 28(8): 1237.
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Preparation of Microcrystalline Silicon Films by Layer-by-Layer Growth Technology and Hydrogen Plasma Treatment on the Stacking Layers in Hot-Wire-Assisted Microwave Electron-Cyclotron-Resonance Chemical Vapor Deposition System
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Abstract
By introducing layer-by-layer (LBL) growth technology and hydrogen plasma treatment on the stacking layers in a hot-wire-assisted microwave electron-cyclotron-resonance chemical vapor deposition (HW-MWECR CVD) system,we fabricate a series of microcrystalline silicon (μc-Si∶H) films with different thicknesses.It is found that when the thickness of the films is less than 0.55μm,they have the typical characteristics of a-Si∶H films,whose photoconductivity degrades rapidly.But when the film thickness is in the range of 0.60～0.70μm,they have characteristics of both amorphous and microcrystalline silicon films,in which the photoconductivity is very sensitive to changes in thickness,but the decay ratio of the photoconductivity is relatively stable.When the thickness of the films is greater than 0.80μm,they have microcrystalline silicon properties.Moreover,the photoconductivity does not change after simulating illumination for 53.5h. -
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