Chin. J. Semicond. > 1997, Volume 18 > Issue 9 > 660-666
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压应变In_(0.63)Ga_(0.37)As/InP单量子阱的变温光致发光研究

王晓亮 , 孙殿照 , 孔梅影 , 侯洵 and 曾一平

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(9): 660-666
      王晓亮, 孙殿照, 孔梅影, 侯洵, 曾一平. 压应变In_(0.63)Ga_(0.37)As/InP单量子阱的变温光致发光研究[J]. 半导体学报(英文版), 1997, 18(9): 660-666.
      Citation:
      王晓亮, 孙殿照, 孔梅影, 侯洵, 曾一平. 压应变In_(0.63)Ga_(0.37)As/InP单量子阱的变温光致发光研究[J]. 半导体学报(英文版), 1997, 18(9): 660-666.
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      • Received Date: 2015-08-19

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