Chin. J. Semicond. > 1997, Volume 18 > Issue 9 > 667-673
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Hg_(1-x)Cd_xTe探测器表面积累层的磁输运特性

桂永胜 , 郑国珍 , 褚君浩 , 郭少令 , 汤定元 and 蔡毅

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(9): 667-673
      桂永胜, 郑国珍, 褚君浩, 郭少令, 汤定元, 蔡毅. Hg_(1-x)Cd_xTe探测器表面积累层的磁输运特性[J]. 半导体学报(英文版), 1997, 18(9): 667-673.
      Citation:
      桂永胜, 郑国珍, 褚君浩, 郭少令, 汤定元, 蔡毅. Hg_(1-x)Cd_xTe探测器表面积累层的磁输运特性[J]. 半导体学报(英文版), 1997, 18(9): 667-673.
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      • Received Date: 2015-08-19

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