| Citation: |
Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, Qi Ming. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. Journal of Semiconductors, 2008, 29(3): 414-417.
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Cheng W, Jin Z, Liu X Y, Yu J Y, Xu A H, Qi M. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. J. Semicond., 2008, 29(3): 414.
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Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz
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Abstract
Polyimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bipolar transistors (SHBTS) are developed.A maximum extrapolated ft of 210GHz is achieved for the SHBT with 1.4μm×15μm emitter area at VCE=1.1V and IC=335mA.This device is suitable for high speed and low power applications,such as ultra high speed mixed signal circuits and optoelectronic communication ICs.-
Keywords:
- InP,
- HBT,
- polyimide,
- planarization
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References
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Proportional views
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