Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 145-148
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Property of Ni-Doped ZnO-Based DMSs

Xiu Xiangqian, Li Binbin, Zhang Rong, Chen Lin, Xie Zili, Han Ping, Shi Yi and Zheng Youdou

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Abstract: Ni-doped ZnO diluted magnetic semiconductors with high-temperature ferromagnetism has been prepared by solgel methods.There is no second phase in the powder while the concentration is lower than 5％.The analysis of microstructure and magnetic properties indicated that the ferromagnetism originated from the uniform ZnO：Ni and the curie temperature is about 650K.

Key words: sol-gel method, zinc oxide, diluted magnetic semiconductors

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 145-148
      Xiu Xiangqian, Li Binbin, Zhang Rong, Chen Lin, Xie Zili, Han Ping, Shi Yi, Zheng Youdou. Property of Ni-Doped ZnO-Based DMSs[J]. Journal of Semiconductors, 2007, 28(S1): 145-148. ****Xiu X Q, Li B B, Zhang R, Chen L, Xie Z L, Han P, Shi Y, Zheng Y D. Property of Ni-Doped ZnO-Based DMSs[J]. Chin. J. Semicond., 2007, 28(S1): 145.
      Citation:
      Xiu Xiangqian, Li Binbin, Zhang Rong, Chen Lin, Xie Zili, Han Ping, Shi Yi, Zheng Youdou. Property of Ni-Doped ZnO-Based DMSs[J]. Journal of Semiconductors, 2007, 28(S1): 145-148. ****
      Xiu X Q, Li B B, Zhang R, Chen L, Xie Z L, Han P, Shi Y, Zheng Y D. Property of Ni-Doped ZnO-Based DMSs[J]. Chin. J. Semicond., 2007, 28(S1): 145.
      shu

      Property of Ni-Doped ZnO-Based DMSs

      • Key Laboratory of Advanced Photonic and Electronic Materials，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Advanced Photonic and Electronic Materials，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Advanced Photonic and Electronic Materials，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Advanced Photonic and Electronic Materials，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Advanced Photonic and Electronic Materials，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Advanced Photonic and Electronic Materials，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Advanced Photonic and Electronic Materials，Department of Physics，Nanjing University，Nanjing 210093，China and Key Laboratory of Advanced Photonic and Electronic Materials，Department of Physics，Nanjing University，Nanjing 210093，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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