GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy

Zhan Feng; Huang Shesong; Ni Haiqiao; Zhao Huan; Xiong Yonghua; Zhou Hongyu; Niu Zhichuan

Key Laboratory of Beam Technology and Material Modifieation of Ministry of Education，Beijing Normal University，Beijing 100875，China,State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Key Laboratory of Beam Technology and Material Modifieation of Ministry of Education，Beijing Normal University，Beijing 100875，China and State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

Article Navigation > Journal of Semiconductors > 2007 > 28(S1): 141-144

Zhan Feng, Huang Shesong, Ni Haiqiao, Zhao Huan, Xiong Yonghua, Zhou Hongyu, Niu Zhichuan. GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy[J]. Journal of Semiconductors, 2007, 28(S1): 141-144. ****Zhan F, Huang S S, Ni H Q, Zhao H, Xiong Y H, Zhou H Y, Niu Z C. GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 141.

Citation:

Zhan Feng, Huang Shesong, Ni Haiqiao, Zhao Huan, Xiong Yonghua, Zhou Hongyu, Niu Zhichuan. GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy[J]. Journal of Semiconductors, 2007, 28(S1): 141-144. ****

Zhan F, Huang S S, Ni H Q, Zhao H, Xiong Y H, Zhou H Y, Niu Z C. GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 141.

Citation:

Zhan F, Huang S S, Ni H Q, Zhao H, Xiong Y H, Zhou H Y, Niu Z C. GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 141.

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GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy

Key Laboratory of Beam Technology and Material Modifieation of Ministry of Education，Beijing Normal University，Beijing 100875，China,State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,Key Laboratory of Beam Technology and Material Modifieation of Ministry of Education，Beijing Normal University，Beijing 100875，China and State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

Received Date: 2016-05-27
Published Date: 2016-04-28

Abstract

Abstract

Several GaAs nanostructures are self·assembly realized by droplet epitaxy in a lattice·matched system (AlGaAs/GaAs). Some interesting GaAs nanostructures，such as GaAs quantum dots，quantum single rings，quantum double rings and ancient Chinese coin shaped nanostructures are fabricated by varying the temperature of the crystallizing Ga droplets. The growth mechanism of these complex nanostructures is addressed.
- droplet epitaxy,
- quantum dots,
- quantum single rings

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